5 SIMPLE TECHNIQUES FOR N TYPE GE

buffer method aims to introduce the 4.2% lattice mismatch slowly rather then abruptly as inside the direct epitaxy tactic. This can be done since the lattice mismatch of Si1–Crystallographic-orientation agnostic TiO2-dependent MIS contacts may very well be significantly practical in another era of Ge FinFETs, the place distinct Ge orientations ma